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Spectroscopic ellipsometry analysis of silicon nanotips obtained by electron cyclotron resonance plasma etching
Linköping University, Department of Physics, Chemistry and Biology, Applied Optics . Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Applied Optics . Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0003-2749-8008
Linköping University, Department of Physics, Chemistry and Biology, Applied Optics . Linköping University, The Institute of Technology.ORCID iD: 0000-0001-9229-2028
National Taipei University of Technology.
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2009 (English)In: APPLIED OPTICS, ISSN 0003-6935, Vol. 48, no 26, 4996-5004 p.Article in journal (Refereed) Published
Abstract [en]

Silicon nanotips fabricated by electron cyclotron resonance plasma etching of silicon wafers are studied by spectroscopic ellipsometry. The structure of the nanotips is composed of columns 100-140 nm wide and spaced by about 200 nm. Ellipsometry data covering a wide spectral range from the midinfrared to the visible are described by modeling the nanotip layer as a graded uniaxial film using the Bruggeman effective medium approximation. The ellipsometry data in the infrared range reveal two absorption bands at 754 and 955 cm(-1), which cannot be resolved with transmittance measurements. These bands indicate that the etching process is accompanied with formation of carbonaceous SiC and CHn species that largely modify the composition of the original crystalline silicon material affecting the optical response of the nanotips. (C) 2009 Optical Society of America

Place, publisher, year, edition, pages
2009. Vol. 48, no 26, 4996-5004 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-51256OAI: oai:DiVA.org:liu-51256DiVA: diva2:273891
Available from: 2009-10-26 Created: 2009-10-26 Last updated: 2015-06-01

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Mendoza-Galvan, ArturoJärrendahl, KennethArwin, Hans

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