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Identification of the gallium vacancy-oxygen pair defect in GaN
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2597-3322
Kyma Technologies Inc, North Carolina.
Kyma Technologies Inc, North Carolina.
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2009 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 80, no 15, 153202- p.Article in journal (Refereed) Published
Abstract [en]

Cation vacancies like VGa, VAl and their complexes with oxygen are predicted to be abundant in III-nitrides and to play an important role in nonradiative recombination. Appearing in triple or double negatively charged states, they are not paramagnetic and have not so far been detected by magnetic resonance even under illumination. In this Brief Report, we demonstrate an efficient way to make cation vacancy defects in GaN detectable by electron paramagnetic resonance and present our identification of the VGaON pair in GaN which is the model material for the III-nitrides and their alloys.

Place, publisher, year, edition, pages
2009. Vol. 80, no 15, 153202- p.
Keyword [en]
gallium arsenide, III-V semiconductors, nonradiative transitions, paramagnetic resonance, vacancies (crystal)
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-51723DOI: 10.1103/PhysRevB.80.153202OAI: oai:DiVA.org:liu-51723DiVA: diva2:277131
Available from: 2009-11-16 Created: 2009-11-16 Last updated: 2015-09-22

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Nguyen, Tien SonHemmingsson, CarlMonemar, BoJanzén, Erik

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