Investigation of optical properties of modulation doped GaN/AlGaN MQWS nanostructures
2009 (English)In: PHYSICA B-CONDENSED MATTER, ISSN 0921-4526, Vol. 404, no 21, 4233-4236 p.Article in journal (Refereed) Published
Due to many important applications, the group III-nitride semiconductors have recently attracted remarkable attention among the semiconductor researchers and engineers. In this paper, we report on the impact of the extrinsic and temporal carriers on the screening of the polarization internal fields. The optical efficiency of GaN/AlGaN multiple quantum well (MQW) nanostructures were studied by means of photoluminescence (PL) and time-resolved PL measurements. Extrinsic carriers come from Si doping in the barriers while temporal carriers originate when the samples are excited by the laser beam. The emission peaks of MQWs in PL spectra of the undoped and low-doped samples show a shift towards higher energy levels as excitation intensity increases, while the other samples do not exhibit such a phenomenon due to the dominance of the extrinsic carriers. The transient data confirm the results of the PL measurements.
Place, publisher, year, edition, pages
2009. Vol. 404, no 21, 4233-4236 p.
Photoluminescence (PL), GaN/ALGaN multi quantum well, Time resolved PL (TRPL), Polarization fields, Exciton, Nanostructures, III-Nitride semiconductors, Quantum well (QW)
IdentifiersURN: urn:nbn:se:liu:diva-52398DOI: 10.1016/j.physb.2009.08.019OAI: oai:DiVA.org:liu-52398DiVA: diva2:285052