Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry
2009 (English)In: APPLIED PHYSICS LETTERS, ISSN 0003-6951, Vol. 95, no 20, 202103- p.Article in journal (Refereed) Published
The free electron properties of nonpolar (1120)-oriented and semipolar (1011)-oriented wurtzite InN films are studied by generalized infrared ellipsometry (GIRSE). We demonstrate the sensitivity of GIRSE to the surface charge accumulation layer and find a distinct surface electron accumulation to occur at all surfaces. The obtained surface electron sheet densities are found to vary from 0.9x10(13) to 2.3x10(14) cm(-2) depending on the surface orientation and bulk electron concentration. The upper limits of the surface electron mobility parameters of 417-644 cm(2)/V s are determined and discussed in the light of electron confinement at the surface.
Place, publisher, year, edition, pages
2009. Vol. 95, no 20, 202103- p.
accumulation layers, electron density, electron mobility, III-V semiconductors, indium compounds, semiconductor thin films, surface charging, wide band gap semiconductors
IdentifiersURN: urn:nbn:se:liu:diva-52412DOI: 10.1063/1.3261731OAI: oai:DiVA.org:liu-52412DiVA: diva2:285068