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Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
University of Nebraska.
University of Nebraska.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2009 (English)In: APPLIED PHYSICS LETTERS, ISSN 0003-6951, Vol. 95, no 20, 202103- p.Article in journal (Refereed) Published
Abstract [en]

The free electron properties of nonpolar (1120)-oriented and semipolar (1011)-oriented wurtzite InN films are studied by generalized infrared ellipsometry (GIRSE). We demonstrate the sensitivity of GIRSE to the surface charge accumulation layer and find a distinct surface electron accumulation to occur at all surfaces. The obtained surface electron sheet densities are found to vary from 0.9x10(13) to 2.3x10(14) cm(-2) depending on the surface orientation and bulk electron concentration. The upper limits of the surface electron mobility parameters of 417-644 cm(2)/V s are determined and discussed in the light of electron confinement at the surface.

Place, publisher, year, edition, pages
2009. Vol. 95, no 20, 202103- p.
Keyword [en]
accumulation layers, electron density, electron mobility, III-V semiconductors, indium compounds, semiconductor thin films, surface charging, wide band gap semiconductors
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-52412DOI: 10.1063/1.3261731OAI: oai:DiVA.org:liu-52412DiVA: diva2:285068
Available from: 2010-01-11 Created: 2009-12-18 Last updated: 2010-01-11

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Darakchieva, VanyaMonemar, Bo

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