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Thermal Stability and Phase Transformations of γ-/Amorphous-Al2O3 Thin Films
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-1785-0864
Interdisciplinary Nanoscience Center (iNANO) and Department of Physics and Astronomy, University of Aarhus, DK-800 Aarhus C, Denmark.
Interdisciplinary Nanoscience Center (iNANO) and Department of Physics and Astronomy, University of Aarhus, DK-800 Aarhus C, Denmark.
Interdisciplinary Nanoscience Center (iNANO) and Department of Physics and Astronomy, University of Aarhus, DK-800 Aarhus C, Denmark.
2009 (English)In: Plasma processes and polymers, ISSN 1612-8850, Vol. 6, no 1, 907-911 p.Article in journal (Refereed) Published
Abstract [en]

Magnetron-sputtered Al2O3 thin films were annealed in ambient air. The phase compositions of the as-deposited Al2O3 films were (i) fully amorphous, (ii) nanocrystalline γ-Al2O3 in an amorphous Al2O3 matrix, and (iii) fully crystalline γ. For all samples, annealing to 1 100-1 150 °C resulted in a transformation to α-alumina. The transformation paths depend on the phase fraction of γ in the as-deposited films. For amorphous films and films with low initial γ fraction, the intermediate phase θ-Al2O3 appeared in the range of 1 000-1 100 °C. For predominantly crystalline γ-Al2O3 as-deposited films no intermediate Al2O3 phases were observed, indicating a direct γ-to-α phase transformation at ≈1 100 °C.

Place, publisher, year, edition, pages
Wiley , 2009. Vol. 6, no 1, 907-911 p.
Keyword [en]
annealing, atomic force microscopy (AFM), faceting, sputtering, X-ray diffraction (XRD)
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-52722DOI: 10.1002/ppap.200932301OAI: oai:DiVA.org:liu-52722DiVA: diva2:285264
Available from: 2010-01-11 Created: 2010-01-11 Last updated: 2015-01-13

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Eklund, Per

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  • apa
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