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AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-3203-7935
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2009 (English)In: ECS Transactions, Vol. 25, Iss. 8, ECS , 2009, 837-844 p.Conference paper, Published paper (Refereed)
Abstract [en]

AlxGa1-xN multiple quantum wells (MQW) were grown on AlN epilayer grown on 4H-SiC substrate. The growth was performed without interruption in a horizontal hot-wall MOCVD reactor using a mixture of hydrogen and nitrogen as carrier gases. The precursors were ammonia, trimethylaluminum and trimethylgallium. Results obtained from X-ray diffraction and infra-red reflectance were used to obtain the composition of the films when growing simple AlxGa1 xN layer. Visible reflectance was used to evaluate the thickness of the films. Finally the MQW parameters as thicknesses and composition variation were obtained by scanning transmission electron microscopy and demonstrated an agreement with the growth parameters used

Place, publisher, year, edition, pages
ECS , 2009. 837-844 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-52723DOI: 10.1149/1.3207674ISBN: 978-156677745-2 (print)OAI: oai:DiVA.org:liu-52723DiVA: diva2:285304
Conference
17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society; Vienna; Austria
Available from: 2010-01-11 Created: 2010-01-11 Last updated: 2015-03-09

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Henry, AnneLundskog, AndersPalisaitis, JustinasIvanov, IvanKakanakova-Georgieva, AneliaForsberg, UrbanPersson, PerJanzén, Erik

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Henry, AnneLundskog, AndersPalisaitis, JustinasIvanov, IvanKakanakova-Georgieva, AneliaForsberg, UrbanPersson, PerJanzén, Erik
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Semiconductor MaterialsThe Institute of TechnologyThin Film Physics
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