The silicon vacancy in SiC
2009 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, Vol. 404, no 22, 4354-4358 p.Article in journal (Refereed) Published
The isolated silicon vacancy is one of the basic intrinsic defects in SiC. We present new experimental data as well as new calculations on the silicon vacancy defect levels and a new model that explains the optical transitions and the magnetic resonance signals observed as occurring in the singly negative charge state of the silicon vacancy in 4H and 6H SiC.
Place, publisher, year, edition, pages
Elsevier, 2009. Vol. 404, no 22, 4354-4358 p.
Silicon vacancy, SiC, EPR, ODMR, PL
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-52770DOI: 10.1016/j.physb.2009.09.023ISI: 000272104000006OAI: oai:DiVA.org:liu-52770DiVA: diva2:285501
Third South African Conference on Photonic Materials, Mabula Game Lodge, Waterberg, South Africa, 23 - 27 March 2009