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The silicon vacancy in SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Budapest University Technology and Econ, Department Atom Phys, H-1111 Budapest, Hungary .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2009 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 404, no 22, 4354-4358 p.Article in journal (Refereed) Published
Abstract [en]

The isolated silicon vacancy is one of the basic intrinsic defects in SiC. We present new experimental data as well as new calculations on the silicon vacancy defect levels and a new model that explains the optical transitions and the magnetic resonance signals observed as occurring in the singly negative charge state of the silicon vacancy in 4H and 6H SiC.

Place, publisher, year, edition, pages
Elsevier, 2009. Vol. 404, no 22, 4354-4358 p.
Keyword [en]
Silicon vacancy, SiC, EPR, ODMR, PL
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-52770DOI: 10.1016/j.physb.2009.09.023ISI: 000272104000006OAI: oai:DiVA.org:liu-52770DiVA: diva2:285501
Conference
Third South African Conference on Photonic Materials, Mabula Game Lodge, Waterberg, South Africa, 23 - 27 March 2009
Available from: 2010-01-12 Created: 2010-01-12 Last updated: 2017-12-12Bibliographically approved

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Janzén, ErikCarlsson, PatrickGällström, AndreasMagnusson, BjörnSon, Nguyen Tien

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Janzén, ErikCarlsson, PatrickGällström, AndreasMagnusson, BjörnSon, Nguyen Tien
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