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Electronic structure of H/Ge(111)1×1 studied by angle-resolved photoelectron spectroscopy
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. (Yt- och Halvledarfysik, Surface and Semiconductor Physics)
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. Linköping University, The Institute of Technology.
2009 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 80, no 19, 193403- p.Article in journal (Refereed) Published
Abstract [en]

The electronic structure of H/Ge(111)1×1 was investigated using angle-resolved photoelectron spectroscopy. Spectra were measured along the high-symmetry lines of the 1×1 surface Brillouin zone. In the Γ̅ −K̅ −M̅ direction, two surface states, labeled a and a, were found in the lower and upper band-gap pockets. The a and a surface states are associated with the Ge-H bonds and the Ge-Ge backbonds, respectively. In the Γ̅ −M̅ direction, only the Ge-H surface state, a, can be identified. It is found in the band-gap pocket around the M̅ point. The two hydrogen-induced surface states on H/Ge(111)1×1 show strong similarities with the corresponding surface states on H/Si(111)1×1. Results from H/Ge(111)1×1 and H/Si(111)1×1 are compared in this Brief Report.

Place, publisher, year, edition, pages
2009. Vol. 80, no 19, 193403- p.
Keyword [en]
adsorption, Brillouin zones, elemental semiconductors, energy gap, germanium, hydrogen, photoelectron spectra, silicon, surface reconstruction, surface states
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-52821DOI: 10.1103/PhysRevB.80.193403ISI: 000272311000022OAI: oai:DiVA.org:liu-52821DiVA: diva2:285626
Available from: 2013-03-26 Created: 2010-01-12 Last updated: 2017-12-12Bibliographically approved

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Razado Colambo, IvyZhang, HanminUhrberg, Roger

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Surface and Semiconductor PhysicsThe Institute of Technology
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