Electronic structure of H/Ge(111)1×1 studied by angle-resolved photoelectron spectroscopy
2009 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 80, no 19, 193403- p.Article in journal (Refereed) Published
The electronic structure of H/Ge(111)1×1 was investigated using angle-resolved photoelectron spectroscopy. Spectra were measured along the high-symmetry lines of the 1×1 surface Brillouin zone. In the Γ̅ −K̅ −M̅ direction, two surface states, labeled a and a′, were found in the lower and upper band-gap pockets. The a and a′ surface states are associated with the Ge-H bonds and the Ge-Ge backbonds, respectively. In the Γ̅ −M̅ direction, only the Ge-H surface state, a, can be identified. It is found in the band-gap pocket around the M̅ point. The two hydrogen-induced surface states on H/Ge(111)1×1 show strong similarities with the corresponding surface states on H/Si(111)1×1. Results from H/Ge(111)1×1 and H/Si(111)1×1 are compared in this Brief Report.
Place, publisher, year, edition, pages
2009. Vol. 80, no 19, 193403- p.
adsorption, Brillouin zones, elemental semiconductors, energy gap, germanium, hydrogen, photoelectron spectra, silicon, surface reconstruction, surface states
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-52821DOI: 10.1103/PhysRevB.80.193403ISI: 000272311000022OAI: oai:DiVA.org:liu-52821DiVA: diva2:285626