Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials
2009 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 95, 241904- p.Article in journal (Refereed) Published
Opticallydetected magnetic resonance measurements are carried out to study formationof Ga interstitial-related defects in Ga(In)NAs alloys. The defects, whichare among dominant nonradiative recombination centers that control carrier lifetimein Ga(In)NAs, are unambiguously proven to be common grown-in defectsin these alloys independent of the employed growth methods. Thedefects formation is suggested to become thermodynamically favorable because ofthe presence of nitrogen, possibly due to local strain compensation.
Place, publisher, year, edition, pages
American Institute of Physics , 2009. Vol. 95, 241904- p.
National CategoryCondensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-52858DOI: 10.1063/1.3275703OAI: oai:DiVA.org:liu-52858DiVA: diva2:285687
Original Publication: Xingjun Wang, Yuttapoom Puttisong, C. W. Tu, Aaron J. Ptak, V. K. Kalevich, A. Yu. Egorov, L. Geelhaar, H. Riechert, Weimin Chen and Irina Buyanova, Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials, 2009, Applied Physics Letters, (95), 241904. http://dx.doi.org/10.1063/1.3275703 Copyright: American Institute of Physics http://www.aip.org/2010-01-122010-01-122014-06-17Bibliographically approved