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Electrothermal actuation of silicon carbide ring resonators
Univ Edinburgh, Sch Engn, Scottish Microelect Ctr, Edinburgh EH9 3JF, Midlothian, Scotland.
Univ Edinburgh, Sch Engn, Scottish Microelect Ctr, Edinburgh EH9 3JF, Midlothian, Scotland.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2009 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 27, no 6, 3109-3114 p.Article in journal (Refereed) Published
Abstract [en]

Silicon carbide (SiC) ring resonators have been designed, simulated, and fabricated in order to achieve higher resonant frequency compared to beam resonators. The resonant frequency as a function of the ring radius and central hole radius, as well as the influence of the electrode design on the actuation efficiency have been investigated. Aluminum (Al) electrodes have been fabricated on top of the structures in order to study the electrothermal actuation of the structures. The bimorph Al/SiC ring resonators have been constructed by etching the SiC in inductively coupled plasma. The release of the Si sacrificial layer has been performed with a XeF2 chemical etching. The radial release and area release have been characterized as a function of the central hole dimension at chamber pressure of 1 and 2 Torr, whereby the release rates have been found to increase as the hole dimensions and the etching pressure increases. In addition, the release process has shown to be governed by aperture effects. The rings fabricated with different dimensions have been actuated mechanically and electrothermally, and the resonant frequency detected optically. The resonant frequency has been shown to increase as the ring radius decreases and the hole radius increases, both theoretically and experimentally.

Place, publisher, year, edition, pages
2009. Vol. 27, no 6, 3109-3114 p.
Keyword [en]
actuators; aluminium; crystal resonators; electrodes; silicon compounds; sputter etching
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-52889DOI: 10.1116/1.3244622OAI: oai:DiVA.org:liu-52889DiVA: diva2:285769
Available from: 2010-01-13 Created: 2010-01-12 Last updated: 2017-12-12

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Henry, AnneJanzén, Erik

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