Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 MeV iodine ion irradiation
2009 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, ISSN 0921-4526, Vol. 404, no 23-24, 4925-4928 p.Article in journal (Refereed) Published
The effects following ion irradiation of GaN-based devices are still limited. Here we present data on the photoluminescence (PL) emitted from InGaN/GaN multiple quantum well (MQW) structures, which have been exposed to 40 MeV I ion irradiation. The PL is reduced as a function of applied ion fluence, with essentially no PL signal left above 1011 ions/cm2. It is observed that even the ion fluences in the 109 ions/cm2 range have a pronounced effect on the photoluminescence properties of the MQW structures. This may have consequences concerning application of InGaN/GaN MQW’s in radiation-rich environments, in addition to defect build-up during ion beam analysis.
Place, publisher, year, edition, pages
Elsevier , 2009. Vol. 404, no 23-24, 4925-4928 p.
InGaN, High-energy ion irradiation, Defects, Optoelectronic devices, Photoluminescence, Ion beam analysis
Condensed Matter Physics Condensed Matter Physics Subatomic Physics Other Engineering and Technologies not elsewhere specified
IdentifiersURN: urn:nbn:se:liu:diva-52956DOI: 10.1016/j.physb.2009.08.233ISI: 000276029300117OAI: oai:DiVA.org:liu-52956DiVA: diva2:286320