liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 MeV iodine ion irradiation
Helsinki University of Technology (TKK), Micronova, Department of Micro and Nanosciences, P.O. Box 3500, FIN-02015 TKK, Finland.
Helsinki University of Technology (TKK), Micronova, Department of Micro and Nanosciences, P.O. Box 3500, FIN-02015 TKK, Finland.
Helsinki University of Technology (TKK), Micronova, Department of Micro and Nanosciences, P.O. Box 3500, FIN-02015 TKK, Finland.
Helsinki University of Technology (TKK), Micronova, Department of Micro and Nanosciences, P.O. Box 3500, FIN-02015 TKK, Finland.
Show others and affiliations
2009 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, ISSN 0921-4526, Vol. 404, no 23-24, 4925-4928 p.Article in journal (Refereed) Published
Abstract [en]

The effects following ion irradiation of GaN-based devices are still limited. Here we present data on the photoluminescence (PL) emitted from InGaN/GaN multiple quantum well (MQW) structures, which have been exposed to 40 MeV I ion irradiation. The PL is reduced as a function of applied ion fluence, with essentially no PL signal left above 1011 ions/cm2. It is observed that even the ion fluences in the 109 ions/cm2 range have a pronounced effect on the photoluminescence properties of the MQW structures. This may have consequences concerning application of InGaN/GaN MQW’s in radiation-rich environments, in addition to defect build-up during ion beam analysis.

Place, publisher, year, edition, pages
Elsevier , 2009. Vol. 404, no 23-24, 4925-4928 p.
Keyword [en]
InGaN, High-energy ion irradiation, Defects, Optoelectronic devices, Photoluminescence, Ion beam analysis
National Category
Condensed Matter Physics Condensed Matter Physics Subatomic Physics Other Engineering and Technologies not elsewhere specified
Identifiers
URN: urn:nbn:se:liu:diva-52956DOI: 10.1016/j.physb.2009.08.233ISI: 000276029300117OAI: oai:DiVA.org:liu-52956DiVA: diva2:286320
Available from: 2010-01-14 Created: 2010-01-14 Last updated: 2017-12-12

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Jensen, Jens

Search in DiVA

By author/editor
Jensen, Jens
By organisation
Thin Film PhysicsThe Institute of Technology
In the same journal
Physica. B, Condensed matter
Condensed Matter PhysicsCondensed Matter PhysicsSubatomic PhysicsOther Engineering and Technologies not elsewhere specified

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 155 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf