Growth, electrical and optical properties of SnO2: F on ZnO, Si and porous Si structures
2009 (English)In: Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics - Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009, CRC Press, 2009, Vol. 1, 352-355 p.Conference paper (Refereed)
In this work we have analyzed the optical absorption of the ZnO and SnO2:F (FTO) films and applied them in porous silicon light-emitting diodes. The absorption and energy gap were calculated by employing the projector augmented wave method  within the local density approximation and with a modeled on-site self-interaction-like correction potential within the LDA+U SIC . Experiment and theory show a good agreement when the optical absorption and optical energy gap are considered. A layer of FTO is deposited by spray pyrolysis on top of porous Si (PSi) or ZnO/(PSi) in order to make the LEDs. The morphology and roughness of the films are analyzed by Atomic Force Microscopy before and after the FTO deposition. The electrical and optical properties are studied by characteristics curves J × V, and electroluminescence intensity versus bias.
Place, publisher, year, edition, pages
CRC Press, 2009. Vol. 1, 352-355 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-52966ISBN: 978-1-4398-1782-7OAI: oai:DiVA.org:liu-52966DiVA: diva2:286410
NSTI Nanotech 2009, NSTI Nanotechnology Conference and Expo, Bio Nano 2009, NSTI Bio Nano Conference and Expo, MSM 2009, 12th International Conference on Modeling and Simulation of Microsystems, ICCN 2009, 9th International Conference on Computational Nanoscience and Technology, Technical Proceedings, Vol. 1, Houston, TX, US, May 3-7, 2009