Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors
2010 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 22, no 1, 72-76 p.Article in journal (Refereed) Published
A polyanionic electrolyte is used as gate insulator in top-gate p-channel polymer thin-film transistors. The high capacitance of the polyelectrolyte film allows the transistors and integrated circuits to operate below 1.5 V. Seven-stage ring oscillators that operate at supply voltages down to 0.9 V and exhibit signal propagation delays as low as 300 µs per stage are reported.
Place, publisher, year, edition, pages
2010. Vol. 22, no 1, 72-76 p.
organic electronics, oscillators, polyelectrolytes, thin-film transistors
IdentifiersURN: urn:nbn:se:liu:diva-53026DOI: 10.1002/adma.200901850OAI: oai:DiVA.org:liu-53026DiVA: diva2:286462