liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology. (Organisk elektronik)
Merck Chemicals Ltd Chilworth Science Park Southampton, SO16 7QD, UK.
Merck Chemicals Ltd Chilworth Science Park Southampton, SO16 7QD,l UK.
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology. (Organisk elektronik)ORCID iD: 0000-0001-8845-6296
Show others and affiliations
2010 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 22, no 1, p. 72-76Article in journal (Refereed) Published
Abstract [en]

A polyanionic electrolyte is used as gate insulator in top-gate p-channel polymer thin-film transistors. The high capacitance of the polyelectrolyte film allows the transistors and integrated circuits to operate below 1.5 V. Seven-stage ring oscillators that operate at supply voltages down to 0.9 V and exhibit signal propagation delays as low as 300 µs per stage are reported.

Place, publisher, year, edition, pages
2010. Vol. 22, no 1, p. 72-76
Keywords [en]
organic electronics, oscillators, polyelectrolytes, thin-film transistors
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-53026DOI: 10.1002/adma.200901850OAI: oai:DiVA.org:liu-53026DiVA, id: diva2:286462
Available from: 2010-01-14 Created: 2010-01-14 Last updated: 2023-12-06Bibliographically approved
In thesis
1. Electrolyte-Gated Organic Thin-Film Transistors
Open this publication in new window or tab >>Electrolyte-Gated Organic Thin-Film Transistors
2011 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

There has been a remarkable progress in the development of organic electronic materials since the discovery of conducting polymers more than three decades ago. Many of these materials can be processed from solution, in the form as inks. This allows for using traditional high-volume printing techniques for manufacturing of organic electronic devices on various flexible surfaces at low cost. Many of the envisioned applications will use printed batteries, organic solar cells or electromagnetic coupling for powering. This requires that the included devices are power efficient and can operate at low voltages.

This thesis is focused on organic thin-film transistors that employ electrolytes as gate insulators. The high capacitance of the electrolyte layers allows the transistors to operate at very low voltages, at only 1 V. Polyanion-gated p-channel transistors and polycation-gated n-channel transistors are demonstrated. The mobile ions in the respective polyelectrolyte are attracted towards the gate electrode during transistor operation, while the polymer ions create a stable interface with the charged semiconductor channel. This suppresses electrochemical doping of the semiconductor bulk, which enables the transistors to fully operate in the field-effect mode. As a result, the transistors display relatively fast switching (≤ 100 µs). Interestingly, the switching speed of the transistors saturates as the channel length is reduced. This deviation from the downscaling rule is explained by that the ionic relaxation in the electrolyte limits the channel formation rather than the electronic transport in the semiconductor. Moreover, both unipolar and complementary integrated circuits based on polyelectrolyte-gated transistors are demonstrated. The complementary circuits operate at supply voltages down to 0.2 V, have a static power consumption of less than 2.5 nW per gate and display signal propagation delays down to 0.26 ms per stage. Hence, polyelectrolyte-gated circuits hold great promise for printed electronics applications driven by low-voltage and low-capacity power sources.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2011. p. 62
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1389
Keywords
Organic electronics, Thin-film transistor, Organic semiconductor, Polymer, Electrolyte, Polyelectrolyte
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:liu:diva-69636 (URN)978-91-7393-088-8 (ISBN)
Public defence
2011-08-26, K3, Kåkenhus, Campus Norrköping, Linköpings universitet, Norrköping, 10:15 (English)
Opponent
Supervisors
Available from: 2011-08-15 Created: 2011-07-08 Last updated: 2019-12-19Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Authority records

Herlogsson, LarsCrispin, XavierBerggren, Magnus

Search in DiVA

By author/editor
Herlogsson, LarsCrispin, XavierBerggren, Magnus
By organisation
Physics and ElectronicsThe Institute of Technology
In the same journal
Advanced Materials
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 912 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf