A comparison between physical simulations and experimental results in 4H-SiC MESFETs with non-constant doping in the channel and buffer layers
2001 (English)In: Maretials Science Forum Vols. 353-356, Stafa-Zurich, Switzerland: Trans Tech Publications Inc., 2001, Vol. 353-356, 699-702 p.Conference paper (Refereed)
The performance of SiC MESFETs, fabricated on a structure with non-constant doping-profiles in the channel and buffer layers have been studied. A good correspondence between experimental DC-characteristics and physical simulations was obtained, when using the doping profiles from SIMS measurements.
Place, publisher, year, edition, pages
Stafa-Zurich, Switzerland: Trans Tech Publications Inc., 2001. Vol. 353-356, 699-702 p.
, Materials Science Forum, ISSN 1662-9752 ; 353-356
IdentifiersURN: urn:nbn:se:liu:diva-53037DOI: 10.4028/www.scientific.net/MSF.353-356.699OAI: oai:DiVA.org:liu-53037DiVA: diva2:286502
ECSCRM 2000: 3rd European Conference on Silicon Carbide and Related Materials, 3-7 September 2000, Kloster Banz, Germany