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DC and RF performance of insulating gate 4H-SiC depletion mode field effect transistors
FOA Defence Research Establishment, Linköping, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
FOA Defence Research Establishment, Linköping, Sweden.
2004 (English)In: Materials Science Forum Vols. 457-460, 2004, 1225-1228 p.Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
2004. 1225-1228 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-53038OAI: oai:DiVA.org:liu-53038DiVA: diva2:286507
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ICSCRM 2003
Available from: 2010-01-14 Created: 2010-01-14 Last updated: 2010-02-25

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Wahab, QamarRudner, Staffan

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