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Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy
CNR IMM, I-95121 Catania, Italy Scuola Super Catania, I-95123 Catania, Italy .
CNR IMM, I-95121 Catania, Italy .
CNR IMM, I-95121 Catania, Italy .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2009 (English)In: PHYSICAL REVIEW B, ISSN 1098-0121, Vol. 80, no 24, 241406- p.Article in journal (Refereed) Published
Abstract [en]

The current transport across the graphene/4H-SiC interface has been investigated with nanometric lateral resolution by scanning current spectroscopy on both epitaxial graphene (EG) grown on (0001) 4H-SiC and graphene exfoliated from highly oriented pyrolytic graphite deposited on the same substrate [deposited graphene (DG)]. This study reveals that the Schottky barrier height (SBH) of EG/4H-SiC (0.36 +/- 0.1 eV) is similar to 0.49 eV lower than the SBH of DG/4H-SiC (0.85 +/- 0.06 eV). This result is discussed in terms of the Fermi-level pinning similar to 0.49 eV above the Dirac point in EG due to the presence of positively charged states at the interface between the Si face of 4H-SiC and the carbon-rich buffer layer, which is the precursor for EG formation.

Place, publisher, year, edition, pages
2009. Vol. 80, no 24, 241406- p.
Keyword [en]
electric properties, epitaxial layers, Fermi level, graphene, interface structure, nanostructured materials, Schottky barriers, silicon compounds
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-53050DOI: 10.1103/PhysRevB.80.241406OAI: diva2:286654
Available from: 2010-01-15 Created: 2010-01-15 Last updated: 2010-01-15

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Yakimova, Rositsa
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Semiconductor MaterialsThe Institute of Technology
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