Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy
2009 (English)In: PHYSICAL REVIEW B, ISSN 1098-0121, Vol. 80, no 24, 241406- p.Article in journal (Refereed) Published
The current transport across the graphene/4H-SiC interface has been investigated with nanometric lateral resolution by scanning current spectroscopy on both epitaxial graphene (EG) grown on (0001) 4H-SiC and graphene exfoliated from highly oriented pyrolytic graphite deposited on the same substrate [deposited graphene (DG)]. This study reveals that the Schottky barrier height (SBH) of EG/4H-SiC (0.36 +/- 0.1 eV) is similar to 0.49 eV lower than the SBH of DG/4H-SiC (0.85 +/- 0.06 eV). This result is discussed in terms of the Fermi-level pinning similar to 0.49 eV above the Dirac point in EG due to the presence of positively charged states at the interface between the Si face of 4H-SiC and the carbon-rich buffer layer, which is the precursor for EG formation.
Place, publisher, year, edition, pages
2009. Vol. 80, no 24, 241406- p.
electric properties, epitaxial layers, Fermi level, graphene, interface structure, nanostructured materials, Schottky barriers, silicon compounds
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-53050DOI: 10.1103/PhysRevB.80.241406OAI: oai:DiVA.org:liu-53050DiVA: diva2:286654