Mid/far-infrared detection using a MESFET with B-modulation doped Ge-dot/SiGe-well multiple stacks in the channel region
2004 (English)Conference paper (Refereed)
Multiple modulation-doped Ge-dot/SiGe-QW stack structures were grown using MBE, and processed as FET devices for mid/far infrared detection. From a non-optimized device, a broadband photoresponse has been observed in the mid-infrared range of 3-15 μm. A peak responsivity was estimated to be as high as 100 mA/W at T= 20 K. This work indicates that SiGE QD/QW structures using the lateral transport geometry can be a potential candidate for photodetectors operating in far-infrared range.
Place, publisher, year, edition, pages
IEEE , 2004. 136-138 p.
IdentifiersURN: urn:nbn:se:liu:diva-53202DOI: 10.1109/GROUP4.2004.1416702ISBN: 0-7803-8474-1OAI: oai:DiVA.org:liu-53202DiVA: diva2:287729
First IEEE International Conference on Group IV Photonics