Spatially direct and indirect transitions of self-assembled SiGe/Si quantum dots studied by photoluminescence excitation spectroscopy
2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 96, no 18, 181107- p.Article in journal (Refereed) Published
Well-resolved photoluminescence excitation (PLE) spectra are reported for selfassembled SiGe dots grown on Si(100) by molecular beam epitaxy. The observation of two excitation resonance peaks is attributed to two different excitation/de-excitation routes of interband optical transitions connected to the spatially direct and indirect recombination processes. It is concluded that two dot populations are addressed by each monitored luminescence energy for the PLE acquisition.
Place, publisher, year, edition, pages
2010. Vol. 96, no 18, 181107- p.
Ge-Si alloys, luminescence, molecular beam epitaxial growth, self-assembly, semiconductor quantum dots
IdentifiersURN: urn:nbn:se:liu:diva-53204DOI: 10.1063/1.3424789ISI: 000277422000007OAI: oai:DiVA.org:liu-53204DiVA: diva2:287743
Bouchaib Adnane, Fredrik Karlsson, Göran Hansson, Per-Olof Holtz and Wei-Xin Ni, Spatially direct and indirect transitions of self-assembled SiGe/Si quantum dots studied by photoluminescence excitation spectroscopy, 2010, Applied Physics Letters, (96), 18, 181107.
Copyright: American Institute of Physics