liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Texture of Al thin films deposited by magnetron sputtering onto epitaxial W(001)
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
University of Illinois.
University of Illinois.
Show others and affiliations
2000 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 87, no 1, 168-171 p.Article in journal (Refereed) Published
Abstract [en]

Highly textured epitaxial metallizations will be required for the next generation of devices with the main driving force being a reduction in electromigration. Herein a model system of 190 nm of Al on a 140 nm layer of W grown on MgO less than 00l greater than substrates was studied. The W layer was less than 00l greater than oriented and rotated 45 degrees with respect to the MgO substrate to minimize the misfit; the remaining strain was accommodated by dislocations, evident in transmission electron microscopy images. From high-resolution x-ray diffraction (XRD) measurements, the out-of-plane lattice parameter was determined to be 3.175 Angstrom, and the in-plane parameter was 3.153 Angstrom, i.e., the W film sustained a strain resulting in a tetragonal distortion of the lattice. XRD pole figures showed that the Al had four fold symmetry and two dominant orientations, less than 016 greater than and less than 3 9 11 greater than, which were twinned with multiple placements on the epitaxial W layer. The driving force for the tilted less than 001 greater than and less than 011 greater than orientations of Al on W is due to strain minimization through lattice matching. These results show that less than 00l greater than Al deposited at ambient conditions onto W is difficult to achieve and implies that electromigration difficulties are inherent.

Place, publisher, year, edition, pages
2000. Vol. 87, no 1, 168-171 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-53574DOI: 10.1063/1.371839OAI: oai:DiVA.org:liu-53574DiVA: diva2:289369
Available from: 2010-01-25 Created: 2010-01-25 Last updated: 2017-12-12

Open Access in DiVA

No full text

Other links

Publisher's full text
By organisation
Department of Physics, Chemistry and BiologyThe Institute of Technology
In the same journal
Journal of Applied Physics
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 24 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf