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Si/SiGe/Si : Er : O light-emitting transistors prepared by differential molecular-beam epitaxy
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics . Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics . Linköping University, The Institute of Technology.
2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 78, no 12, 1697-1699 p.Article in journal (Refereed) Published
Abstract [en]

Si/SiGe/Si:Er:O heterojunction bipolar transistor (HBT) type light-emitting devices with Er3+ ions incorporated in the collector region have been fabricated using a layered structure grown by differential molecular-beam epitaxy. Electroluminescence measurements on processed light-emitting HBTs can be performed in either constant driving current mode or constant applied bias mode, which is an important advantage over conventional Si:Er light-emitting diodes. Intense room-temperature light emission at the Er3+ characteristic wavelength of 1.54 mum has been observed at low driving current density, e.g., 0.1 A cm(-2), and low applied bias, e.g., 3 V, across the collector and emitter. (C) 2001 American Institute of Physics.

Place, publisher, year, edition, pages
2001. Vol. 78, no 12, 1697-1699 p.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-53565DOI: 10.1063/1.1356732OAI: oai:DiVA.org:liu-53565DiVA: diva2:289379
Available from: 2010-01-25 Created: 2010-01-25 Last updated: 2017-12-12

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Du, Chun-XiaHansson, GöranNi, Wei-Xin

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Department of Physics, Chemistry and BiologyThe Institute of TechnologySurface and Semiconductor Physics
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