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An ab initio study of intrinsic stacking faults in GaN
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Lulea University of Technology.
University of Newcastle upon Tyne.
2004 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 457-460, 1617-1620 p.Article in journal (Refereed) Published
Abstract [en]

A first-principles study of intrinsic stacking faults in GaN is reported. Our calculations are based on density functional theory in local density approximation. We have found that the electron wave functions belonging to the conduction and valence band edge states tend to be localized almost exclusively on different sides of the faulted layer. We suggest that the electrostatic field caused by the macroscopically polarized 2H-GaN parts below and above a thin 3C-like layer around the stacking fault is responsible for these possibly shallow localized states.

Place, publisher, year, edition, pages
2004. Vol. 457-460, 1617-1620 p.
Keyword [en]
GaN; stacking faults; first-principles calculation
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-53521DOI: 10.4028/ diva2:289631
Available from: 2010-01-25 Created: 2010-01-25 Last updated: 2010-03-09

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