DC and RF performance of insulating gate 4H-SiC depletion mode Field Effect Transistors
2004 (English)In: Materials Science Forum, Vols. 457-460, 2004, Vol. 457-460, 1225-1228 p.Conference paper (Refereed)
A depletion mode 4H-SiC MOSFET for RT applications is studied using drift-diffusion physical device simulations. The structure is basically the same as for a MESFET. A MOS gate with a 30 nm thick SiO2 layer replaces the Schottky gate. A 40% increase in the drain current was observed for a positive gate bias of 7 V compared to 0 V. The small signal AC analysis showed f(T) and f(max) to be 15.7 and 52.9 GHz respectively.
Place, publisher, year, edition, pages
2004. Vol. 457-460, 1225-1228 p.
RF power transistors; MOSFETs; depletion mode transistors
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-53522DOI: 10.4028/www.scientific.net/MSF.457-460.1225OAI: oai:DiVA.org:liu-53522DiVA: diva2:289633