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EFFECT OF THE EXTRINSIC AND TEMPORAL CARRIERS ON RADIATIVE RECOMBINATION OF III-NITRIDE NANOSTRUCTURES
Islam Azad University.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Islam Azad University.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2008 (English)In: IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A-SCIENCE, ISSN 1028-6276, Vol. 32, no A3, 207-213 p.Article in journal (Refereed) Published
Abstract [en]

Due to many important applications, the group III-Nitride semiconductors have recently attracted remarkable attention among semiconductor researchers and engineers. In this paper, we report on the impact of extrinsic and temporal carriers on the screening of polarization internal fields. The optical efficiency of GaN/AlGaN multiple quantum well (MQW) nanostructures were studied by means of photoluminescence (PL) and time-resolved PL measurements. Extrinsic carriers come from Si doping in the barriers, while temporal carriers originate when the samples are excited by laser beam. The emission peaks of MQWs in PL spectra of the undoped and low-doped samples show a shift towards higher energy levels as excitation intensity increases, while the other samples do not exhibit such a phenomenon due to the dominance of the extrinsic carriers. The transient data confirm the results of the PL measurements.

Place, publisher, year, edition, pages
2008. Vol. 32, no A3, 207-213 p.
Keyword [en]
Nanostructures, photoluminescence (PL), GaN/AlGaN multi quantum well, time Resolved PL (TRPL), polarization fields, exciton, III-Nitride semiconductors, quantum well
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-53686ISI: 000273591500007OAI: oai:DiVA.org:liu-53686DiVA: diva2:291268
Available from: 2010-02-01 Created: 2010-02-01 Last updated: 2010-08-12

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CiteExportLink to record
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Citation style
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