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Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1-xPtx silicide films
Royal Institute of Technology.
Fudan University.
Royal Institute of Technology.
Royal Institute of Technology.
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2010 (English)In: APPLIED PHYSICS LETTERS, ISSN 0003-6951, Vol. 96, no 3, 031911- p.Article in journal (Refereed) Published
Abstract [en]

The formation of ultrathin silicide films of Ni1-xPtx at 450-850 degrees C is reported. Without Pt (x=0) and for t(Ni)andlt; 4 nm, epitaxially aligned NiSi2-y films readily grow and exhibit extraordinary morphological stability up to 800 degrees C. For t(Ni)andgt;= 4 nm, polycrystalline NiSi films form and agglomerate at lower temperatures for thinner films. Without Ni (x=1) and for t(Pt)=1-20 nm, the annealing behavior of the resulting PtSi films follows that for the NiSi films. The results for Ni1-xPtx of other compositions support the above observations. Surface energy is discussed as the cause responsible for the distinct behavior in phase formation and morphological stability.

Place, publisher, year, edition, pages
2010. Vol. 96, no 3, 031911- p.
Keyword [en]
annealing, crystal morphology, metallic epitaxial layers, nanostructured materials, nickel alloys, nickel compounds, surface energy
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-53937DOI: 10.1063/1.3291679ISI: 000273890500024OAI: diva2:293550
Available from: 2010-02-12 Created: 2010-02-12 Last updated: 2016-08-31

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Hultman, Lars
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Department of Physics, Chemistry and BiologyThe Institute of TechnologyThin Film Physics
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ReferencesLink to record
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