Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics
2009 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 6, no 2, 344-347 p.Article in journal (Refereed) Published
Polar and nonpolar bulk GaN substrates with low defect density and high structural and optical quality are demonstrated. The effect of doping by silicon, oxygen and iron within moderate doping levels on the properties of the polar GaN substrates was found uncompromised, as confirmed by high resolution X-ray diffraction and low temperature photoluminescence spectroscopy. In contrast, the lattice parameters were affected significantly, which has to be considered in the subsequent homoepitaxial device growth. The boule growth and respectively the nonpolar substrate homogeneity were found to be hampered by the doping, due to surface microcracking and higher impurity incorporation, while n-type undoped nonpolar substrates were demonstrated of superior quality.
Place, publisher, year, edition, pages
2009. Vol. 6, no 2, 344-347 p.
National CategoryNatural Sciences
IdentifiersURN: urn:nbn:se:liu:diva-53964DOI: 10.1002/pssc.200880912OAI: oai:DiVA.org:liu-53964DiVA: diva2:294367
International Workshop on Nitride Semiconductors (IWN2008), Montreux, Switzerland