liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics
Kyma Technologies Inc.
Kyma Technologies Inc.
Kyma Technologies Inc.
Kyma Technologies Inc.
Show others and affiliations
2009 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 6, no 2, 344-347 p.Article in journal (Refereed) Published
Abstract [en]

Polar and nonpolar bulk GaN substrates with low defect density and high structural and optical quality are demonstrated. The effect of doping by silicon, oxygen and iron within moderate doping levels on the properties of the polar GaN substrates was found uncompromised, as confirmed by high resolution X-ray diffraction and low temperature photoluminescence spectroscopy. In contrast, the lattice parameters were affected significantly, which has to be considered in the subsequent homoepitaxial device growth. The boule growth and respectively the nonpolar substrate homogeneity were found to be hampered by the doping, due to surface microcracking and higher impurity incorporation, while n-type undoped nonpolar substrates were demonstrated of superior quality.

Place, publisher, year, edition, pages
2009. Vol. 6, no 2, 344-347 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-53964DOI: 10.1002/pssc.200880912OAI: oai:DiVA.org:liu-53964DiVA: diva2:294367
Conference
International Workshop on Nitride Semiconductors (IWN2008), Montreux, Switzerland
Available from: 2010-02-17 Created: 2010-02-16 Last updated: 2010-04-26

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Paskova, TanjaPaskov, Plamen

Search in DiVA

By author/editor
Paskova, TanjaPaskov, Plamen
By organisation
Semiconductor MaterialsThe Institute of Technology
In the same journal
Physica Status Solidi. C, Current topics in solid state physics
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 84 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf