Electron spin filtering by thin GaNAs/GaAs multiquantum wells
2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 96, no 5, 052104- p.Article in journal (Refereed) Published
Effectiveness of the recently discovered defect-engineered spin-filtering effect is closely examined in GaNAs/GaAs multiquantum wells (QWs) as a function of QW width. In spite of narrow well widths of 3-9 nm, rather efficient spin filtering is achieved at room temperature. It leads to electron spin polarization larger than 18% and an increase in photoluminescence intensity by 65% in the 9 nm wide QWs. A weaker spin filtering effect is observed in the narrower QWs, mainly due to a reduced sheet concentration of spin-filtering defects (e.g., Ga-i interstitial defects).
Place, publisher, year, edition, pages
2010. Vol. 96, no 5, 052104- p.
electron spin polarisation, gallium arsenide, III-V semiconductors, nitrogen compounds, photoluminescence, semiconductor quantum wells
Engineering and Technology Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-54084DOI: 10.1063/1.3299015ISI: 000274319500045OAI: oai:DiVA.org:liu-54084DiVA: diva2:298245