Thermal instability of implanted Mn ions in ZnO
2010 (English)In: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, Vol. 107, no 2, 023507- p.Article in journal (Refereed) Published
This letter reports on the site configuration of implanted Mn cations in ZnO. The samples studied were obtained by means of ion implantation in m-plane ZnO single crystals. Synchrotron radiation based fluorescence shows no contamination during the implantation process. The results of micro-x-ray absorption spectroscopy indicate that Mn ions are located in substitutional sites without detectable traces of secondary phases. The postgrowth thermal annealing in O-2 atmosphere induces a change in the coordination of a large amount of Mn cations, corresponding to alpha-Mn2O3.
Place, publisher, year, edition, pages
2010. Vol. 107, no 2, 023507- p.
annealing, ferromagnetic materials, fluorescence, II-VI semiconductors, ion implantation, manganese, semiconductor growth, semimagnetic semiconductors, synchrotron radiation, wide band gap semiconductors, X-ray absorption spectra, zinc compounds
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-54068DOI: 10.1063/1.3275890ISI: 000274180600030OAI: oai:DiVA.org:liu-54068DiVA: diva2:298301