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Heteroepitaxial ZnO nano hexagons on p-type SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Aristotle University Thessaloniki.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2837-3656
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2010 (English)In: JOURNAL OF CRYSTAL GROWTH, ISSN 0022-0248, Vol. 312, no 2, 327-332 p.Article in journal (Refereed) Published
Abstract [en]

ZnO single crystal nanohexagons have been grown heteroepitaxially on p-type Si-face 4H-SiC substrates with 8 degrees miscut from to [0 0 0 1] by catalyst-free atmospheric pressure metalorganic chemical vapor deposition and characterized by x-ray diffraction, scanning and transmission electron microscopy as well as energy disperse x-ray and cathodoluminescence analyses. The as-grown ZnO nanohexagons have a pillar shape terminated by a and c plane facets, and are aligned along the growth direction with the epitaxial relation [0 0 0 1](ZnO) parallel to[0 0 0 1](4H-SiC) and [1 0 (1) over bar 0](ZnO) parallel to[1 0 (1) over bar 0](4H-SiC). The ZnO nanohexagons demonstrate intense UV emission (lambda(NBE)=376 nm) and negligible defect-related luminescence.

Place, publisher, year, edition, pages
2010. Vol. 312, no 2, 327-332 p.
Keyword [en]
Crystal structure, Nanostructures, Interfaces, Metalorganic chemical vapor, deposition, Light emitting diodes
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-54065DOI: 10.1016/j.jcrysgro.2009.09.057ISI: 000274220400031OAI: oai:DiVA.org:liu-54065DiVA: diva2:298306
Available from: 2010-02-22 Created: 2010-02-22 Last updated: 2016-08-31

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Khranovskyy, VolodymyrYazdi, GholamrezaHultman, LarsYakimova, Rositsa

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