Heteroepitaxial ZnO nano hexagons on p-type SiC
2010 (English)In: JOURNAL OF CRYSTAL GROWTH, ISSN 0022-0248, Vol. 312, no 2, 327-332 p.Article in journal (Refereed) Published
ZnO single crystal nanohexagons have been grown heteroepitaxially on p-type Si-face 4H-SiC substrates with 8 degrees miscut from to [0 0 0 1] by catalyst-free atmospheric pressure metalorganic chemical vapor deposition and characterized by x-ray diffraction, scanning and transmission electron microscopy as well as energy disperse x-ray and cathodoluminescence analyses. The as-grown ZnO nanohexagons have a pillar shape terminated by a and c plane facets, and are aligned along the growth direction with the epitaxial relation [0 0 0 1](ZnO) parallel to[0 0 0 1](4H-SiC) and [1 0 (1) over bar 0](ZnO) parallel to[1 0 (1) over bar 0](4H-SiC). The ZnO nanohexagons demonstrate intense UV emission (lambda(NBE)=376 nm) and negligible defect-related luminescence.
Place, publisher, year, edition, pages
2010. Vol. 312, no 2, 327-332 p.
Crystal structure, Nanostructures, Interfaces, Metalorganic chemical vapor, deposition, Light emitting diodes
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-54065DOI: 10.1016/j.jcrysgro.2009.09.057ISI: 000274220400031OAI: oai:DiVA.org:liu-54065DiVA: diva2:298306