Sputter deposition from a Ti2AlC target: Process characterization and conditions for growth of Ti2AlC
2010 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 518, no 6, 1621-1626 p.Article in journal (Refereed) Published
Sputter deposition from a Ti2AlC target was found to yield Ti-Al-C films with a composition that deviates from the target composition of 2:1:1. For increasing substrate temperature from ambient to 1000 degrees C, the Al content decreased from 22 at.% to 5 at.%, due to re-evaporation. The C content in as-deposited films was equal to or higher than the Ti content. Mass spectrometry of the plasma revealed that the Ti and Al species were essentially thermalized, while a large fraction of C with energies andgt;4 eV was detected. Co-sputtering with Ti yielded a film stoichiometry of 2:0.8:0.9 for Ti:Al:C, which enabled growth of Ti2AlC. These results indicate that an additional Ti flux balances the excess C and therefore provides for more stoichiometric Ti2AlC synthesis conditions.
Place, publisher, year, edition, pages
Elsevier , 2010. Vol. 518, no 6, 1621-1626 p.
MAX phase, Titanium carbide, Compound target, Physical vapor deposition, X-ray diffraction
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-54250DOI: 10.1016/j.tsf.2009.11.059ISI: 000274812200001OAI: oai:DiVA.org:liu-54250DiVA: diva2:302301
Jenny Frodelius, Per Eklund, Manfred Beckers, Per Persson, Hans Högberg and Lars Hultman, Sputter deposition from a Ti2AlC target: Process characterization and conditions for growth of Ti2AlC, 2010, THIN SOLID FILMS, (518), 6, 1621-1626.
Copyright: Elsevier Science B.V., Amsterdam.