Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction
2010 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 81, 115334- p.Article in journal (Refereed) Published
Optically detected magnetic resonance (ODMR) studies of molecular beam epitaxial GaNP/GaP structures reveal presence of a P-related complex defect, evident from its resolved hyperfine interaction between an unpaired electronic spin (S=1/2) and a nuclear spin (I = ½) of a 31P atom. The principal axis of the defect is concluded to be along a <111> crystallographic direction from angular dependence of the ODMR spectrum, restricting the P atom (either a PGa antisite or a Pi interstitial) and its partner in the complex defect to be oriented along this direction. The principal values of the electronic g-tensor and hyperfine interaction tensor are determined as: g┴=2.013, g║=2.002, and A┴=130´10-4 cm-1, A║=330´10-4 cm-1, respectively. The interface nature of the defect is clearly manifested by the absence of the ODMR lines originating from two out of four equivalent <111> orientations. Defect formation is shown to be facilitated by nitrogen ion bombardment under non-equilibrium growth conditions and the defect is thermally stable upon post-growth thermal annealing.
Place, publisher, year, edition, pages
The American Physical Society , 2010. Vol. 81, 115334- p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-54721DOI: 10.1103/PhysRevB.81.115334ISI: 000276248800111OAI: oai:DiVA.org:liu-54721DiVA: diva2:308371
Original Publication: Daniel Dagnelund, I. P Vorona, L. S. Vlasenko, X. J. Wang, A. Utsumi, Y. Furukawa, A. Wakahara, H. Yonezu, I. A. Buyanova and W. M. Chen, Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction, 2010, Physical Review B Condensed Matter, (81), , 115334. http://dx.doi.org/10.1103/PhysRevB.81.115334 Copyright: American Physical Society http://www.aps.org/2010-04-062010-04-062015-05-28