Carrier and Spin Injection from ZnMnSe to CdSe Quantum Dots
(English)Manuscript (preprint) (Other academic)
Optical carrier/exction and spin injection processes from a ZnMnSe dilute magnetic semiconductor (DMS) to CdSe quantum dots (QD’s) are studied in detail by means of spinpolarized magneto- photoluminescence (PL) and PL excitation spectroscopies. Efficiency of carrier/exciton transfer is found to be practically independent of width (Lb) of a ZnSe barrier layer inserted between the DMS and QD’s. This is tentatively explained in terms of photonexchange energy transfer. In sharp contrast, spin injection efficiency is found to be largely suppressed in the structures with large Lb, pointing towards increasing spin loss.
Spin injection, carrier injection, quantum dots, CdSe, ZnMnSe.
IdentifiersURN: urn:nbn:se:liu:diva-54793OAI: oai:DiVA.org:liu-54793DiVA: diva2:309918