Electronic mechanism for toughness enhancement in TixM1-xN (M=Mo and W)
2010 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 81, no 10, 104107-104113 p.Article in journal (Refereed) Published
Toughness, besides hardness, is one of the most important properties of wear-resistant coatings. We use ab initio density-functional theory calculations to investigate the mechanical properties of ternary metal nitrides TixM1-xN, with M=Mo and W, for x=0.5. Results show that Mo and W alloying significantly enhances the toughness of TiN. The electronic mechanism responsible for this improvement, as revealed by electronic structure calculations, stems from the changes in charge density induced by the additional transition-metal atom. This leads to the formation of a layered electronic arrangement, characterized by strong, respectively, weak, directional bonding, which enables a selective response to strain, respectively, shear, deformations of the structures and yields up to 60% decrease in C-44 values.
Place, publisher, year, edition, pages
American Physical Society , 2010. Vol. 81, no 10, 104107-104113 p.
cubic, transition metal nitrides, mechanical properties, ab initio, dft, ductility, toughness, electronic structure
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-54851DOI: 10.1103/PhysRevB.81.104107ISI: 000276248700040OAI: oai:DiVA.org:liu-54851DiVA: diva2:310865
Davide Sangiovanni, Valeriu Chirita and Lars Hultman, Electronic mechanism for toughness enhancement in TixM1-xN (M=Mo and W), 2010, PHYSICAL REVIEW B, (81), 10, 104107.
Copyright: American Physical Society