Current-transport studies and trap extraction of hydrothermally grown ZnO nanotubes using gold Schottky diode
2010 (English)In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, ISSN 1862-6300, Vol. 207, no 3, 748-752 p.Article in journal (Refereed) Published
High-quality zinc oxide (ZnO) nanotubes (NTs) were grown by the hydrothermal technique on n-Si substrate. The room temperature (RT) current-transport mechanisms of Au Schottky diodes fabricated from ZnO NTs and nanorods (NRs) reference samples have been studied and compared. The tunneling mechanisms via deep-level states was found to be the main conduction process at low applied voltage but at the trap-filled limit voltage (V-TFL) all traps were filled and the space-charge-limited current conduction was the dominating current-transport mechanism. The deep-level trap energy and the trap concentration for; the NTs were obtained as similar to 0.27 eV and 2.1 x 10(16) cm(-3), respectively. The same parameters were also extracted for the ZnO NRs The deep-level states observed crossponds to zinc interstitials (Zn-i), which are responsible for the violet emission.
Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH, PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY , 2010. Vol. 207, no 3, 748-752 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-55049DOI: 10.1002/pssa.200925547ISI: 000276339800054OAI: oai:DiVA.org:liu-55049DiVA: diva2:315275