Numerical modeling of SiC single crystal growth-sublimation and hot-wall epitaxy
2009 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 311, no 3, 871-874 p.Article in journal (Refereed) Published
On the engineering point of view, it is important to develop a design technology of the furnace for SiC single crystal growth. In this point of view, the recent progress of modeling on both sublimation bulk growth and hot-wall epitaxy were presented. For the sublimation, the active control of grown crystal shape by modifying crucible geometry was demonstrated. The effect of nitrogen doping on the heat transfer in a growing crystal were also investigated. For the hot-wall epitaxy, growth rate, surface morphology, and doping concentration could be predicted qualitatively with taking account of the depositing surface conditions. Chlorine-containing system was supposed to provide more stable and uniform process than the common SiH4-based system.
Place, publisher, year, edition, pages
Elsevier Science B.V., Amsterdam. , 2009. Vol. 311, no 3, 871-874 p.
Computer simulation; Heat transfer; Growth from vapor; Single crystal growth; Chemical vapor deposition processes; Semiconducting silicon compounds
Medical and Health Sciences
IdentifiersURN: urn:nbn:se:liu:diva-55097DOI: 10.1016/j.jcrysgro.2008.09.105ISI: 000264161700107OAI: oai:DiVA.org:liu-55097DiVA: diva2:315338