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Numerical modeling of SiC single crystal growth-sublimation and hot-wall epitaxy
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
2009 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 311, no 3, 871-874 p.Article in journal (Refereed) Published
Abstract [en]

On the engineering point of view, it is important to develop a design technology of the furnace for SiC single crystal growth. In this point of view, the recent progress of modeling on both sublimation bulk growth and hot-wall epitaxy were presented. For the sublimation, the active control of grown crystal shape by modifying crucible geometry was demonstrated. The effect of nitrogen doping on the heat transfer in a growing crystal were also investigated. For the hot-wall epitaxy, growth rate, surface morphology, and doping concentration could be predicted qualitatively with taking account of the depositing surface conditions. Chlorine-containing system was supposed to provide more stable and uniform process than the common SiH4-based system.

Place, publisher, year, edition, pages
Elsevier Science B.V., Amsterdam. , 2009. Vol. 311, no 3, 871-874 p.
Keyword [en]
Computer simulation; Heat transfer; Growth from vapor; Single crystal growth; Chemical vapor deposition processes; Semiconducting silicon compounds
National Category
Medical and Health Sciences
URN: urn:nbn:se:liu:diva-55097DOI: 10.1016/j.jcrysgro.2008.09.105ISI: 000264161700107OAI: diva2:315338
Available from: 2010-04-29 Created: 2010-04-29 Last updated: 2010-04-29

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Department of Physics, Chemistry and BiologyThe Institute of Technology
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