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Comparison of Two GaN Transistor Technologies in Broadband Power Amplifiers
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Swedish Defence Research Agency.
2010 (English)In: MICROWAVE JOURNAL, ISSN 0192-6225, Vol. 53, no 4, 184-192 p.Article in journal (Refereed) Published
Abstract [en]

This article compares the performance of two different GaN transistor technologies, GaN HEMT on silicon substrate (PA1) and GaN on SiC (PA2), utilized in two broadband power amplifiers operating at 0.7 to 1.8 GHz. The study explores the broadband power amplifier potential of both GaN HEMT technologies for phased-array radar (PAR) and electronic warfare (EW) systems. The measured maximum output power for PA1 is 42.5 dBm (18 W) with a maximum PAE of 66 percent and a gain of 19.5 dB. The measured maximum output power for PA2 is 40 dBm with a PAE of 37 percent and a power gain slightly above 10 dB. The high power gain, ME, wider bandwidth and unconditional stability was obtained without feedback for the amplifier based on GaN HEMT technology, fabricated on Si substrate.

Place, publisher, year, edition, pages
Horizon House Publications, Inc. , 2010. Vol. 53, no 4, 184-192 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-56296ISI: 000276987100002OAI: oai:DiVA.org:liu-56296DiVA: diva2:318312
Available from: 2010-05-07 Created: 2010-05-07 Last updated: 2011-02-21

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Azam, SherSvensson, ChristerWahab, Qamar Ul

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