Silicon antisite related defects in electron-irradiated p-type 4H- and 6H-SiC
(English)Manuscript (preprint) (Other academic)
The electron paramagnetic resonance (EPR) LE5 centers were previously observed in electron-irradiated p-type 4H- and 6H-SiC but have not been identified due to lack of experimental data. In this study, two different Si hyperfine (hf) structures of the LE5 centers have been detected and the corresponding hf tensors have been determined. One structure is due to a very anisotropic hf interaction with one Si atom and the other structure to the hf interaction with two neighboring Si atoms in the basal plane. The obtained g values and Si hf constants are in good agreement with calculated parameters reported for antisite pairs in 4H-SiC. Based on the similarity in the spin-Hamiltonian parameters, the LE5 centers may be the antisite pairs in the positive charge state.
IdentifiersURN: urn:nbn:se:liu:diva-56585OAI: oai:DiVA.org:liu-56585DiVA: diva2:320502