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Group-II acceptors in wurtzite AlN: A screened hybrid density functional study
Budapest University Technology and Economics.
Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials . Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Budapest University Technology and Economics.
2010 (English)In: APPLIED PHYSICS LETTERS, ISSN 0003-6951, Vol. 96, no 19, 192110- p.Article in journal (Refereed) Published
Abstract [en]

We systematically studied the group-II acceptors in wurtzite AlN by screened hybrid density functional calculations. We show that the shallowest isolated group-II substitutional defect is Mg, while codoping of Mg and O may yield even shallower acceptor level.

Place, publisher, year, edition, pages
American Institute of Physics , 2010. Vol. 96, no 19, 192110- p.
Keyword [en]
aluminium compounds, density functional theory, III-V semiconductors, impurity states, magnesium, oxygen, semiconductor doping, wide band gap semiconductors
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-56810DOI: 10.1063/1.3429086ISI: 000277756400034OAI: oai:DiVA.org:liu-56810DiVA: diva2:322250
Note
Original Publication: Aron Szabo, Ngyen Tien Son, Erik Janzén and Adam Gali, Group-II acceptors in wurtzite AlN: A screened hybrid density functional study, 2010, APPLIED PHYSICS LETTERS, (96), 19, 192110. http://dx.doi.org/10.1063/1.3429086 Copyright: American Institute of Physics http://www.aip.org/ Available from: 2010-06-04 Created: 2010-06-04 Last updated: 2010-06-11

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Tien Son, NgyenJanzén, Erik

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
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  • nn-NO
  • nn-NB
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  • Other locale
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Output format
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