Electronic structure of the thallium-induced 2x1 reconstruction on Si(001)
2010 (English)In: PHYSICAL REVIEW B, ISSN 1098-0121, Vol. 81, no 20, 205422- p.Article in journal (Refereed) Published
With a Tl coverage of one monolayer, a 2 x 1 reconstruction is formed on the Si (001) surface at room temperature. In this study, low-temperature angle-resolved photoelectron spectroscopy (ARPES) data reveal four surface state bands associated with this Tl induced reconstruction. Calculated surface state dispersions, obtained using the "pedestal + valley-bridge" model, are found to be similar to those obtained using ARPES. Inclusion of spin-orbit coupling in the calculations is found to be important to arrive at these results. A known effect of the strong spin-orbit coupling is the reluctance of the Tl 6s(2) electrons to participate in the bonding, i.e., the inert pair effect. In the calculations, inclusion of spin-orbit coupling results in a similar to 5 eV downshift of the Tl 6s(2) electrons.
Place, publisher, year, edition, pages
American Physical Society , 2010. Vol. 81, no 20, 205422- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-57166DOI: 10.1103/PhysRevB.81.205422ISI: 000278144500098OAI: oai:DiVA.org:liu-57166DiVA: diva2:323555
Peter Eriksson, Kazuyuki Sakamoto and Roger Uhrberg, Electronic structure of the thallium-induced 2x1 reconstruction on Si(001), 2010, PHYSICAL REVIEW B, (81), 20, 205422.
Copyright: American Physical Society