Fabrication and characterization of high-brightness light emitting diodes based on n-ZnO nanorods grown by a low-temperature chemical method on p-4H-SiC and p-GaN
2010 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 25, no 6, 065004- p.Article in journal (Refereed) Published
Light emitting diodes (LEDs) based on n-ZnO nanorods (NRs)/p-4H-SiC and n-ZnO (NRs)/p-GaN were fabricated and characterized. For the two LEDs the ZnO NRs were grown using a low temperature (andlt;100 degrees C) aqueous chemical growth (ACG) technique. Both LEDs showed very bright nearly white light electroluminescence (EL) emission. The observed luminescence was a result of the combination of three emission lines composed of violet-blue, green and orange-red peaks observed from the two LEDs. Room temperature photoluminescence (PL) was also measured and consistency with EL was observed. It was found that the green and violet-blue peaks are red-shifted while the orange peak is blue-shifted in the EL measurement. It was also found that due to the effect of the GaN substrate the violet-blue peak in the EL measurement is more red-shifted in n-ZnO (NRs)/p-GaN LEDs as compared to n-ZnO (NRs)/p-4H-SiC LEDs.
Place, publisher, year, edition, pages
Iop Publishing Ltd , 2010. Vol. 25, no 6, 065004- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-57158DOI: 10.1088/0268-1242/25/6/065004ISI: 000277982700005OAI: oai:DiVA.org:liu-57158DiVA: diva2:323567