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Investigation of vertical organic transistor geometries and materials for printable applications
Linköping University, Department of Science and Technology.
2010 (English)Independent thesis Advanced level (degree of Master (Two Years)), 80 credits / 120 HE creditsStudent thesis
Abstract [en]

The  discovery  of  organic  electronics  has  opened  many  new  possibilities  for electronic industries and systems. For organic field effect transistors (OFETs), many advantages,  such  as  high  flexibility,  low-cost  production  and  large  area  processing, can be used in many applications. Even though OFET cannot replace the conventional FET to lead the electronic industries, there are still many possibilities of OFET that conventional FET cannot approach.  In transistor development, scaling down the devices has been the main challenge for  a  long  time.  By  scaling  down  the  size,  transistors  become  faster,  smaller,  less power  consumption,  and  are  cheaper  for  fabrication.  Shortening  the  channel  of transistors is a main problem in reducing the device size. To address this, processing of a vertically structured OFET is a much easier way of shortening the channel length compared to using the ordinary lateral channel structure of OFET.    In this thesis, two methods were used for processing vertically  separated drain and  source  electrodes:  one  is  the  dry-etching  method,  and  the  other  one  is  the oblique-incidence depositing method. Au as conducting material of drain and source electrodes,  P3HT  as  semiconductor,  PSSH  as  electrolyte,  and  the  Ti/probe  of  FET station  as  gate  material  were  chosen  for  the  experiments.  For  insulating  material,  a polyvinylidene  fluoride  copolymer  was  used  in  dry-etching  method  and  SU-8 photoresist was used in oblique-incidence depositing method. The channel length in this thesis depended on the thickness of the insulating layer. A channel of around 10 µm was processed using the dry-etching method with a yield of almost 95 percent and a  channel  smaller  than  1  µm  was  processed  using  the  oblique-incidence  depositing method with a yield of around 80 percent.

Place, publisher, year, edition, pages
2010. , 48 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-57896ISRN: LiU-ITN-TEK-A--10/040--SEOAI: oai:DiVA.org:liu-57896DiVA: diva2:328386
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Available from: 2010-08-10 Created: 2010-07-02 Last updated: 2011-03-22Bibliographically approved

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