Temperature and Magnetic Field Effects on the Transport Controlled Charge State of a Single Quantum Dot
2010 (English)In: NANOSCALE RESEARCH LETTERS, ISSN 1931-7573, Vol. 5, no 7, 1150-1155 p.Article in journal (Refereed) Published
Individual InAs/GaAs quantum dots are studied by micro-photoluminescence. By varying the strength of an applied external magnetic field and/or the temperature, it is demonstrated that the charge state of a single quantum dot can be tuned. This tuning effect is shown to be related to the in-plane electron and hole transport, prior to capture into the quantum dot, since the photo-excited carriers are primarily generated in the barrier.
Place, publisher, year, edition, pages
Springer Science Business Media , 2010. Vol. 5, no 7, 1150-1155 p.
Quantum dot; Wetting layer; Magnetic field; Temperature dependence; Charge state
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-58223DOI: 10.1007/s11671-010-9618-xISI: 000279674400012OAI: oai:DiVA.org:liu-58223DiVA: diva2:338059
The original publication is available at www.springerlink.com:
L. Arvid Larsson, Mats Larsson, E. S. Moskalenko and Per-Olof Holtz, Temperature and Magnetic Field Effects on the Transport Controlled Charge State of a Single Quantum Dot, 2010, NANOSCALE RESEARCH LETTERS, (5), 7, 1150-1155.
Copyright: Springer Science Business Media