Formation of basal plane fiber-textured Ti2AlN films on amorphous substrates
2010 (English)In: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, ISSN 1862-6254, Vol. 4, no 05-Jun, 121-123 p.Article in journal (Refereed) Published
The synthesis of fiber-textured Ti2AlN(0001) films on SiO2 was characterized by in-situ and ex-situ X-ray scattering and Rutherford backscattering spectrometry. Ti2AlN was formed by solid-state reaction between sequentially deposited Ti and AlN layers. A deposition at 275 degrees C yields a Ti(0001) out-of-plane orientation which is maintained for the following AlN(0001)/Ti(0001) layers. Annealing to 600 degrees C yields AlN decomposition and diffusion of Al and N into Ti, with consecutive transformation into (TiAlN)-Al-3(111) and Ti2AlN(0001) plus AlN residuals. Despite preferred Ti2AlN(0001) out-of-plane orientation, the in-plane distribution is random, as expected from the self-organized pseudo-epitaxial growth.
Place, publisher, year, edition, pages
John Wiley and Sons, Ltd , 2010. Vol. 4, no 05-Jun, 121-123 p.
X-ray diffraction; thin films; growth; sputtering
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-58222DOI: 10.1002/pssr.201004100ISI: 000279658900009OAI: oai:DiVA.org:liu-58222DiVA: diva2:338060