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Free standing AIN single crystal grown on pre-patterned and in situ patterned 4H-SiC substrates
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Newcastle University.
Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials . Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
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2010 (English)In: Materials Science Forum, Vols. 645-648, Transtec Publications; 1999 , 2010, Vol. 645-648, 1187-1190 p.Conference paper, Published paper (Refereed)
Abstract [en]

Free standing AIN wafers were grown on pre-patterned and in situ patterned 4H-SiC substrates by a physical vapor transport method. It is based on the coalescence of AIN microrods, which evolve from the apex of SiC pyramids grown on the SIC substrate during a temperature ramp up for in situ patterned substrate and SiC pyramids formed by reactive ion etching (RIE). This process yields stress-free (according XRD and Raman results) AIN single crystals with a thickness up to 400 mu m and low dislocation density.

Place, publisher, year, edition, pages
Transtec Publications; 1999 , 2010. Vol. 645-648, 1187-1190 p.
Keyword [en]
Free standing; Hexagonal pyramids; AIN; reactive ion etching; physical vapor transport
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-58215DOI: 10.4028/www.scientific.net/MSF.645-648.1187ISI: 000279657600283OAI: oai:DiVA.org:liu-58215DiVA: diva2:338098
Conference
ICSCRM2009
Available from: 2010-08-10 Created: 2010-08-09 Last updated: 2013-10-02

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Yazdi, GholamrezaCordoba Gallego, Jose ManuelGogova, DanielaSyväjärvi, MikaelOdén, MagnusYakimova, Rositsa

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Yazdi, GholamrezaCordoba Gallego, Jose ManuelGogova, DanielaSyväjärvi, MikaelOdén, MagnusYakimova, Rositsa
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Semiconductor MaterialsThe Institute of TechnologyNanostructured Materials Department of Physics, Chemistry and Biology
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