Free standing AIN single crystal grown on pre-patterned and in situ patterned 4H-SiC substrates
2010 (English)In: Materials Science Forum, Vols. 645-648, Transtec Publications; 1999 , 2010, Vol. 645-648, 1187-1190 p.Conference paper (Refereed)
Free standing AIN wafers were grown on pre-patterned and in situ patterned 4H-SiC substrates by a physical vapor transport method. It is based on the coalescence of AIN microrods, which evolve from the apex of SiC pyramids grown on the SIC substrate during a temperature ramp up for in situ patterned substrate and SiC pyramids formed by reactive ion etching (RIE). This process yields stress-free (according XRD and Raman results) AIN single crystals with a thickness up to 400 mu m and low dislocation density.
Place, publisher, year, edition, pages
Transtec Publications; 1999 , 2010. Vol. 645-648, 1187-1190 p.
Free standing; Hexagonal pyramids; AIN; reactive ion etching; physical vapor transport
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-58215DOI: 10.4028/www.scientific.net/MSF.645-648.1187ISI: 000279657600283OAI: oai:DiVA.org:liu-58215DiVA: diva2:338098