Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
2010 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 / [ed] Bauer, AJ; Friedrichs, P; Krieger, M; Pensl, G; Rupp, R; Seyller, T, Trans Tech Publications Inc., 2010, Vol. 645-648, 565-568 p.Conference paper (Refereed)
We are aiming at understanding the graphene formation mechanism on different SiC polytypes (6H, 4H and 3C) and orientations with the ultimate goal to fabricate large area graphene (up to 2 inch) with controlled number of monolayers and spatial uniformity. To reach the objectives we are using high-temperature atmospheric pressure sublimation process in an inductively heated furnace. The epitaxial graphene is characterized by ARPES, LEEM and Raman spectroscopy. Theoretical studies are employed to get better insight of graphene patterns and stability. Reproducible results of single layer graphene on the Si-face of 6H and 4H-SiC polytypes have been attained. It is demonstrated that thickness uniformity of graphene is very sensitive to the substrate miscut.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2010. Vol. 645-648, 565-568 p.
, Materials Science Forum, ISSN 0255-5476 ; Vol. 645 - 648
sublimation; high temperature; Ar pressure; ARPES; LEEM; DFT
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-58214DOI: 10.4028/www.scientific.net/MSF.645-648.565ISI: 000279657600135OAI: oai:DiVA.org:liu-58214DiVA: diva2:338101
13th International Conference on Silicon Carbide and Related Materials (ICSCRM2009), Nurnberg, GERMANY, OCT 11-16, 2009