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Metastable defects in low-energy electron irradiated n-type 4H-SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2597-3322
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-7171-5383
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
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2010 (English)In: Materials Science Forum, Vols. 645-648, Trans Tech Publications , 2010, Vol. 645-648, 435-438 p.Conference paper, Published paper (Refereed)
Abstract [en]

After low-energy electron irradiation of epitaxial n-type 4H-SiC, the DUES peak amplitudes. of the defects Z(1/2) and EH6/7, which were already observed in as-grown layers, increased and the commonly found peaks EH1 and EH3 appeared. The bistable M-center, previously seen in high-energy proton implanted 4H-SiC, was detected. New bistable defects, the EB-centers, evolved after annealing out of the M-center, and EF3. The reconfiguration energies for one of the two EB-centers were determined to be about 0.96 eV for both transitions: from configuration I to II and from configuration II to I. Since low-energy electron irradiation (less than220 keV) affects mainly the carbon atom in SiC, both the M- and EB-centers are likely to be carbon related defects.

Place, publisher, year, edition, pages
Trans Tech Publications , 2010. Vol. 645-648, 435-438 p.
Keyword [en]
metastable defects; bistability; electron irradiation; DLTS
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-58213DOI: 10.4028/www.scientific.net/MSF.645-648.435ISI: 000279657600104OAI: oai:DiVA.org:liu-58213DiVA: diva2:338102
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ICSCRM2009
Note
Original Publication: Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima and Erik Janzén, Metastable defects in low-energy electron irradiated n-type 4H-SiC, 2010, Materials Science Forum, (645-648), 435-438. http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.435 Copyright: Transtec Publications http://www.ttp.net/ Available from: 2010-08-10 Created: 2010-08-09 Last updated: 2015-09-22

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Beyer, FranziskaHemmingsson, CarlPedersen, HenrikHenry, AnneJanzén, Erik

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