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The carbon vacancy related EI4 defect in 4H-SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
University of Tsukuba.
Japan Atomic Energy Agency.
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2010 (English)In: Materials Science Forum. Vols. 645-648, Trans Tech Publications , 2010, Vol. 645-648, 399-402 p.Conference paper, Published paper (Refereed)
Abstract [en]

Electron paramagnetic resonance (EPR) was used to study high-purity semi-insulating 4H-SiC irradiated with 2 MeV electrons at room temperature. The EPR signal of the EI4 defect was found to be dominating in samples irradiated and annealed at 750 C. Additional large-splitting Si-29 hyperfine (hf) lines and also other C-13 and Si-29 hf structures were observed. Based on the observed hf structures and annealing behaviour, the complex between a negative carbon vacancy-carbon antisite pair (VCCSi-) and a distance positive carbon vacancy (V-C(+)) is tentatively proposed as a possible model for the EIO4 defect.

Place, publisher, year, edition, pages
Trans Tech Publications , 2010. Vol. 645-648, 399-402 p.
Keyword [en]
vacancies; antisite; electron irradiation; EPR; hyperfine interaction
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-58212DOI: 10.4028/www.scientific.net/MSF.645-648.399ISI: 000279657600095OAI: oai:DiVA.org:liu-58212DiVA: diva2:338104
Conference
ICSCRM2009
Available from: 2010-08-10 Created: 2010-08-09 Last updated: 2012-04-03

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Nguyen, Tien SonCarlsson, PatrickMagnusson, BjörnJanzén, Erik

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