The carbon vacancy related EI4 defect in 4H-SiC
2010 (English)In: Materials Science Forum. Vols. 645-648, Trans Tech Publications , 2010, Vol. 645-648, 399-402 p.Conference paper (Refereed)
Electron paramagnetic resonance (EPR) was used to study high-purity semi-insulating 4H-SiC irradiated with 2 MeV electrons at room temperature. The EPR signal of the EI4 defect was found to be dominating in samples irradiated and annealed at 750 C. Additional large-splitting Si-29 hyperfine (hf) lines and also other C-13 and Si-29 hf structures were observed. Based on the observed hf structures and annealing behaviour, the complex between a negative carbon vacancy-carbon antisite pair (VCCSi-) and a distance positive carbon vacancy (V-C(+)) is tentatively proposed as a possible model for the EIO4 defect.
Place, publisher, year, edition, pages
Trans Tech Publications , 2010. Vol. 645-648, 399-402 p.
vacancies; antisite; electron irradiation; EPR; hyperfine interaction
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-58212DOI: 10.4028/www.scientific.net/MSF.645-648.399ISI: 000279657600095OAI: oai:DiVA.org:liu-58212DiVA: diva2:338104