Macrodefects in cubic silicon carbide crystals
2010 (English)In: Materials Science Forum, Vols. 645-648, Transtec Publications; 1999 , 2010, Vol. 645-648, 375-378 p.Conference paper (Refereed)
Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 mu m/h with the thickness of the crystals from 190 to 230 mu m, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal growth. The highest concentration of macrodefects appears in the vicinity of the domain in samples grown under high temperature gradient: and fastest temperature ramp up. The formation of macrodefects was related to carbon deficiency which appear due to high Si/C ratio which is used to enable formation of the 3C-SiC polytype.
Place, publisher, year, edition, pages
Transtec Publications; 1999 , 2010. Vol. 645-648, 375-378 p.
3C-SiC crystals; sublimation epitaxy; voids
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-58211DOI: 10.4028/www.scientific.net/MSF.645-648.375ISI: 000279657600089OAI: oai:DiVA.org:liu-58211DiVA: diva2:338106