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Macrodefects in cubic silicon carbide crystals
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-3203-7935
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2010 (English)In: Materials Science Forum, Vols. 645-648, Transtec Publications; 1999 , 2010, Vol. 645-648, 375-378 p.Conference paper, Published paper (Refereed)
Abstract [en]

Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 mu m/h with the thickness of the crystals from 190 to 230 mu m, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal growth. The highest concentration of macrodefects appears in the vicinity of the domain in samples grown under high temperature gradient: and fastest temperature ramp up. The formation of macrodefects was related to carbon deficiency which appear due to high Si/C ratio which is used to enable formation of the 3C-SiC polytype.

Place, publisher, year, edition, pages
Transtec Publications; 1999 , 2010. Vol. 645-648, 375-378 p.
Keyword [en]
3C-SiC crystals; sublimation epitaxy; voids
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-58211DOI: 10.4028/www.scientific.net/MSF.645-648.375ISI: 000279657600089OAI: oai:DiVA.org:liu-58211DiVA: diva2:338106
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ICSCRM2009
Available from: 2010-08-10 Created: 2010-08-09 Last updated: 2015-03-06

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Jokubavicius, ValdasPalisaitis, JustinasVasiliauskas, RemigijusYakimova, RositsaSyväjärvi, Mikael

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Jokubavicius, ValdasPalisaitis, JustinasVasiliauskas, RemigijusYakimova, RositsaSyväjärvi, Mikael
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