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Single Shockley Stacking Faults in as-grown 4H-SiC Epilayers
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2010 (English)In: Materials Science Forum, Vols. 645-648, Transtec Publications; 1999 , 2010, Vol. 645-648, 327-330 p.Conference paper, Published paper (Refereed)
Abstract [en]

An extended structural defects which locally drastically reduces the carrier lifetime, has been observed in as-grown epilayers. A combination of back polishing, etching in molten KOH and optical microscopy revealed the geometrical structure of the stacking fault inside the epilayer. The fault started close to the epi-substrate interface, expanded initially rapidly but changed geometry after some time and reduced in size during further growth. The optical spectrum as well as the temperature dependence from this fault is identical to the emission from the single Shockley stacking faults previously only observed and formed in the bipolar diodes during forward voltage operation.

Place, publisher, year, edition, pages
Transtec Publications; 1999 , 2010. Vol. 645-648, 327-330 p.
Keyword [en]
SiC; Stacking Faults; Photoluminescence; Carrier Lifetime
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-58210DOI: 10.4028/www.scientific.net/MSF.645-648.327ISI: 000279657600077OAI: oai:DiVA.org:liu-58210DiVA: diva2:338108
Conference
ICSCRM2009
Available from: 2010-08-10 Created: 2010-08-09 Last updated: 2010-12-08

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ul-Hassan, JawadBergman, Peder

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