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Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
UMR-CNRS.
UMR-CNRS.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
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2010 (English)In: Materials Science Forum, Vols. 645-648, Transtec Publications; 1999 , 2010, Vol. 645-648, 183-186 p.Conference paper, Published paper (Refereed)
Abstract [en]

3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000 degrees C, on different types of on-axis 6H-SiC(0001) substrates. The influence of the type of substrate on the morphology of the layers investigated by Atomic Force Microscopy (AFM) is discussed. Stacking faults are studied by reciprocal space map (RSM) which shows that double positions domains exists.

Place, publisher, year, edition, pages
Transtec Publications; 1999 , 2010. Vol. 645-648, 183-186 p.
Keyword [en]
3C-SiC; Sublimation Epitaxy; morphology; AFM; HRXRD
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-58208DOI: 10.4028/www.scientific.net/MSF.645-648.183ISI: 000279657600043OAI: oai:DiVA.org:liu-58208DiVA: diva2:338119
Conference
ICSCRM2009
Available from: 2010-08-10 Created: 2010-08-09 Last updated: 2010-12-08

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Beshkova, MilenaBirch, JensSyväjärvi, MikaelYakimova, Rositsa

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Beshkova, MilenaBirch, JensSyväjärvi, MikaelYakimova, Rositsa
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