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Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Aristotle University of Thessaloniki.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Aristotle University of Thessaloniki.
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2010 (English)In: Materials Science Forum, Vols. 645-648, Transtec Publications; 1999 , 2010, Vol. 645-648, 175-178 p.Conference paper, Published paper (Refereed)
Abstract [en]

Epitaxial growth of cubic silicon carbide on 6H-SiC substrates, and 6H-SiC substrates with (111) 3C-SiC buffer layer, deposited by vapour liquid solid mechanism, was compared. The morphological details of the grown layers were studied by optical microscopy and their microstructure by transmission electron microscopy. The influence of the substrate on the nucleation of 3C-SiC, the initial homoepitaxial 6H-SiC nucleation before 3C-SiC as well as the formation of defects, are discussed.

Place, publisher, year, edition, pages
Transtec Publications; 1999 , 2010. Vol. 645-648, 175-178 p.
Keyword [en]
3C-SiC nucleation; sublimation epitaxy; VLS; TEM; twins
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-58207DOI: 10.4028/www.scientific.net/MSF.645-648.175ISI: 000279657600041OAI: oai:DiVA.org:liu-58207DiVA: diva2:338121
Conference
ICSCRM2009
Available from: 2010-08-10 Created: 2010-08-09 Last updated: 2010-12-08

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Vasiliauskas, RemigijusSyväjärvi, MikaelYakimova, Rositsa

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